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MIC4423-YN Scheda tecnica(PDF) 3 Page - Microchip Technology |
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MIC4423-YN Scheda tecnica(HTML) 3 Page - Microchip Technology |
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3 / 26 page ![]() 2022 Microchip Technology Inc. and its subsidiaries DS20006638A-page 3 MIC4423/4/5 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings † Supply Voltage ..........................................................................................................................................................+22V Input Voltage .................................................................................................................................. VS +0.3V to GND –5V Junction Temperature............................................................................................................................................ +150°C Storage Temperature Range.................................................................................................................. –65°C to +150°C Lead Temperature (10 sec.).................................................................................................................................. +300°C ESD Susceptability, (Note 1)...................................................................................................................................1000V Operating Ratings ‡ Supply Voltage (VS) ................................................................................................................................... +4.5V to +18V Package Thermal Resistance DIP JA................................................................................................................................................................130°C/W DIP JC..................................................................................................................................................................42°C/W Wide-SOIC JA....................................................................................................................................................120°C/W Wide-SOIC JC......................................................................................................................................................75°C/W SOIC JA.............................................................................................................................................................120°C/W SOIC JC...............................................................................................................................................................75°C/W † Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability. Specifications are for packaged product only. ‡ Notice: The device is not guaranteed to function outside its operating ratings. Note 1: Devices are ESD sensitive. Handling precautions are recommended. Human body model, 1.5 kΩ in series with 100 pF. TABLE 1-1: ELECTRICAL CHARACTERISTICS Electrical Characteristics: 4.5V ≤ VS ≤ 18V; TA = +25°C, Bold values indicate –40°C ≤ TA ≤ +85°C; unless otherwise specified. Specifications for packaged product only. Parameter Symbol Min. Typ. Max. Units Conditions Input Logic 1 Input Voltage VIH 2.4 — — V — Logic 0 Input Voltage VIH — — 0.8 V — Input Current IIN –1 — 1 µA 0V ≤ VIN ≤ VS –10 — 10 — Output High Output Voltage VOH VS–0.025 — — V — Low Output Voltage VOL — — 0.025 V — Output Resistance HI State RO — 2.8 5 Ω IOUT = 10 mA, VS = 18V — 3.7 8 Ω VIN = 0.8V, IOUT = 10 mA, VS = 18V Output Resistance LO State — 3.5 5 Ω IOUT = 10 mA, VS = 18V — 4.3 8 Ω VIN = 2.4V, IOUT = 10 mA, VS = 18V Peak Output Resistance IPK — 3 — A — Latch-Up Protection Withstand Reverse Current I >500 — — mA — |
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