MMBFJ112 datasheet(2/11 Pages) ONSEMI

2 / 11 page

J111, J112, J113, MMBFJ111, MMBFJ112, MMBFJ113

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Symbol

Parameter

Test Condition

Min

Max

Unit

OFF CHARACTERISTICS

V(BR)GSS

Gate−Source Breakdown Voltage

IG = −1.0 mA, VDS = 0

−35

−

IGSS

Gate Reverse Current

VGS = −15 V, VDS = 0

−

−1.0

VGS(off)

Gate−Source Cut−Off Voltage

VDS = 5 V, ID = 1.0 mA

111

−3.0

−10.0

112

−1.0

−5.0

113

−0.5

−3.0

ID(off)

Drain Cutoff Leakage Current

VDS = 5.0 V, VGS = −10 V

−

1.0

ON CHARACTERISTICS

IDSS

Zero−Gate Voltage Drain Current (Note 5)

VDS = 15 V, VGS = 0

111

−

112

5.0

−

113

2.0

−

rDS(on)

Drain−Source On Resistance

VDS ≤ 0.1 V, VGS = 0

111

−

112

−

113

−

100

SMALL SIGNAL CHARACTERISTICS

Cdg(on)

Csg(on)

Drain−Gate &Source−Gate On Capacitance VDS = 0, VGS = 0, f = 1.0 MHz

−

Cdg(off)

Drain−Gate Off Capacitance

VDS = 0, VGS = −10 V, f = 1.0 MHz

−

5.0

Csg(off)

Source−Gate Off Capacitance

VDS = 0, VGS = −10 V, f = 1.0 MHz

−

5.0

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

5. Pulse test: pulse width ≤300 ms, duty cycle ≤2%.

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