© Semiconductor Components Industries, LLC, 1997

April, 2021 − Rev. 4

1

Publication Order Number:

MMBFJ113/D

N-Channel Switch

J111, J112, J113,

MMBFJ111, MMBFJ112,

MMBFJ113

Features

and Hold Circuits and Chopper Stabilized Amplifiers

(Note 1, 2)

Symbol

Parameter

Value

Unit

Drain−Gate Voltage

35

V

Gate−Source Voltage

−35

V

Forward Gate Current

50

mA

Temperature Range

−55 to 150

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. These ratings are based on a maximum junction temperature of 150°C.

2. These are steady−state limits. ON Semiconductor should be consulted on

applications involving pulsed or low−duty−cycle operations.

Symbol

Parameter

Max

Unit

J111 / J112 /

J113

(Note 3)

MMBFJ111 /

MMBFJ112 /

MMBFJ113

(Note 4)

Total Device Dissipation

625

350

mW

Derate Above 25_C

5.0

2.8

mW/°C

Thermal Resistance,

Junction−to−Case

125

−

°C/W

Thermal Resistance,

Junction−to−Ambient

200

357

°C/W

3. PCB size: FR−4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch)

with minimum land pattern size.

4. Device mounted on FR−4 PCB 36 mm x 18 mm x 1.5 mm; mounting pad for

www.onsemi.com

MARKING DIAGRAMS

See detailed ordering and shipping information on page 6 of

this data sheet.

ORDERING INFORMATION

TO−92 3 4.83x4.76 LEADFORMED

CASE 135AR

TO−92 3 4.825x4.76

CASE 135AN

SOT−23 (TO−236)

CASE 318−08

1

XXM

XXXX, XX = Specific Device Code

A

= Assembly Plant Code

Y

= Year

WW

= Work Week

M

= Date Code

SOT−23

CASE 318BM

AX

XXX

YWW

D

S

G

D

S

G

G

D

S

G

D

S