SIS4604DN datasheet(1/7 Pages) VISHAY

Il numero della parte	SIS4604DN

Spiegazioni elettronici	N-Channel 60 V (D-S) MOSFET

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Produttore elettronici	VISHAY [Vishay Siliconix]

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SiS4604DN

www.vishay.com

Vishay Siliconix

S22-0033-Rev. A, 17-Jan-2022

1

Document Number: 62028

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

N-Channel 60 V (D-S) MOSFET

FEATURES

• TrenchFET® Gen IV power MOSFET

• Very low RDS x Qg figure-of-merit (FOM)

• Tuned for the lowest RDS x Qoss FOM

• 100 % Rg and UIS tested

• Material categorization: for definitions of

compliance please see www.vishay.com/doc?99912

APPLICATIONS

• Synchronous rectification

• Primary side switch

•DC/DC converter

• Motor drive switch

• Circuit protection

•Load switch

Notes

a. TC = 25 °C

b. Surface mounted on 1" x 1" FR4 board

c. t = 10 s

d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components

f. Maximum under steady state conditions is 81 °C/W

PRODUCT SUMMARY

VDS (V)

60

RDS(on) max. (

Ω) at VGS = 10 V

0.0095

RDS(on) max. (

Ω) at VGS = 7.5 V

0.0124

Qg typ. (nC)

11.2

ID (A)

44.4 a

Configuration

Single

PowerPAK® 1212-8 Single

Top View

1

3.3

mm

3.3

mm

Bottom View

1

S

1

S

2

S

3

S

4

G

D

8

D

7

D

6

D

5

N-Channel MOSFET

G

D

S

ORDERING INFORMATION

Package

PowerPAK 1212-8

Lead (Pb)-free and halogen-free

SIS4604DN-T1-GE3

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

VDS

60

V

Gate-source voltage

VGS

± 20

Continuous drain current (TJ = 150 °C)

TC = 25 °C

ID

44.4

A

TC = 70 °C

35.5

TA = 25 °C

14.6 b, c

TA = 70 °C

11.7 b, c

Pulsed drain current (t = 100 μs)

IDM

100

Continuous source-drain diode current

TC = 25 °C

IS

30.7

TA = 25 °C

3.3 b, c

Single pulse avalanche current

L = 0.1 mH

IAS

20

Single pulse avalanche energy

EAS

20

mJ

Maximum power dissipation

TC = 25 °C

PD

33.7

W

TC = 70 °C

21.6

TA = 25 °C

3.6 b, c

TA = 70 °C

2.3 b, c

Operating junction and storage temperature range

TJ, Tstg

-55 to +150

°C

Soldering recommendations (peak temperature) d, e

260

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYPICAL

MAXIMUM

UNIT

Maximum junction-to-ambient b

t

≤ 10 s

RthJA

26

34

°C/W

Maximum junction-to-case (drain)

Steady state

RthJC

3.0

3.7

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