SIR862DP datasheet(4/13 Pages) VISHAY

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SiR862DP

www.vishay.com

Vishay Siliconix

S10-0041-Rev. A, 11-Jan-10

Document Number: 65672

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Source-Drain Diode Forward Voltage

Threshold Voltage

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power

Safe Operating Area, Junction-to-Ambient

0.0

0.2

0.4

0.6

0.8

1.0

1.2

SD - Source-to-Drain Voltage (V)

0.01

0.001

0.1

100

J = 150 °C

J = 25 °C

- 1.0

- 0.7

- 0.4

- 0.1

0.2

0.5

- 50

- 25

100

125

150

J - Temperature (°C)

D = 250 µA

D =5mA

0.000

0.003

0.006

0.009

0.012

0.015

012

GS - Gate-to-Source Voltage (V)

D =15A

J = 125 °C

J = 25 °C

120

160

200

00.01

Time (s)

0.1

0.01

100

0.01

0.1

DS - Drain-to-Source Voltage (V)

GS > minimum VGS at which RDS(on) is specified

1ms

10 ms

100 ms

0.1

A = 25 °C

Single Pulse

10 s

BVDSS

Limited

Limited by RDS(on)*

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