SIR892DP_V01 datasheet(3/13 Pages) VISHAY

Il numero della parte	SIR892DP

Spiegazioni elettronici	N-Channel 25-V (D-S) MOSFET

PDF	13 Pages

Scroll/Zoom	100%

Produttore elettronici	VISHAY [Vishay Siliconix]

Homepage	http://www.vishay.com

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3 / 13 page

Document Number: 68639

S-83048-Rev. B, 22-Dec-08

www.vishay.com

Vishay Siliconix

SiR892DP

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

0.0

0.5

1.0

1.5

2.0

2.5

VDS - Drain-to-Source Voltage (V)

VGS =10thru 4 V

VGS =3 V

0.0020

0.0025

0.0030

0.0035

0.0040

0.0045

12243648

ID - Drain Current (A)

VGS =10 V

VGS =4.5 V

0.0

8.4

16.8

25.2

33.6

42.0

Qg - Total Gate Charge (nC)

VDS =15 V

VDS =10 V

VDS =5 V

ID =10A

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0.0

0.8

1.6

2.4

3.2

4.0

VGS - Gate-to-Source Voltage (V)

TC = 25 °C

TC = 125 °C

TC = - 55 °C

VDS - Drain-to-Source Voltage (V)

Crss

700

1400

2100

2800

3500

Ciss

Coss

0.6

0.9

1.2

1.5

1.8

- 50

- 25

100

125

150

TJ -Junction Temperature (°C)

ID =10A

VGS =4.5 V

VGS =10 V

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