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RA4M2 Scheda tecnica(PDF) 60 Page - Renesas Technology Corp

Il numero della parte RA4M2
Spiegazioni elettronici  Leading-performance 100 MHz Arm Cortex-M33 core, up to 512 KB code flash memory with background operation, 8 KB Data flash memory, and 128 KB SRAM with Parity/ECC.
PDF  92 Pages
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Produttore elettronici  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RA4M2 Scheda tecnica(HTML) 60 Page - Renesas Technology Corp

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tSR
tHR
tDTR
SSIBCK0
(Input or Output)
SSILRCK0/SSIFS0 (input),
SSIRXD0 (input)
SSILRCK0/SSIFS0 (output),
SSITXD0 (output)
Figure 2.47
SSIE data transmit and receive timing when SSICR.BCKP = 1
tDTRW
SSILRCK0/SSIFS0 (input)
SSITXD0 (output)
MSB bit output delay after SSILRCK0/SSIFS0 change for slave
transmitter when DEL = 1, SDTA = 0 or DEL = 1, SDTA = 1, SWL[2:0] = DWL[2:0] in SSICR.
Figure 2.48
SSIE data output delay after SSILRCK0/SSIFS0 change
2.3.13
SD/MMC Host Interface Timing
Table 2.32
SD/MMC Host Interface signal timing
Conditions: High drive output is selected in the Port Drive Capability bit in the PmnPFS register.
Clock duty ratio is 50%.
Parameter
Symbol
Min
Max
Unit
Test conditions
SDCLK clock cycle
TSDCYC
20
—
ns
Figure 2.49
SDCLK clock high pulse width
TSDWH
6.5
—
ns
SDCLK clock low pulse width
TSDWL
6.5
—
ns
SDCLK clock rise time
TSDLH
—
3
ns
SDCLK clock fall time
TSDHL
—
3
ns
SDCMD/SDDAT output data delay
TSDODLY
–7
4
ns
SDCMD/SDDAT input data setup
TSDIS
4.5
—
ns
SDCMD/SDDAT input data hold
TSDIH
1.5
—
ns
RA4M2 Datasheet
2. Electrical Characteristics
R01DS0367EJ0110 Rev.1.10
Jan 27, 2021
Page 60 of 92



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