2SC2383TQ-R datasheet(1/2 Pages) FS

Il numero della parte	2SC2383TQ-R

Spiegazioni elettronici	Silicon NPN transistor in a SOT-89 Plastic Package

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Produttore elettronici	FS [First Silicon Co., Ltd]

Homepage	http://www.firstsilicon.co.kr/

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S E M IC O NDUC TO R

TECHNICAL DATA

2SC2383TQ

2017. 05. 10

Revision No : 0

1/2

2SC2383TQ

FEATURES

Silicon NPN transistor in a SOT-89 Plastic Package

Color TV class B sound output applications

SOT-89

G

D

A

C

H

1

2

3

K

F

D

DIM

MILLIMETERS

A

4.70 MAX

B

2.50 +_0.20

C

1.70 MAX

D

0.45+0.15/-0.10

E

4.25 MAX

F

1.50+_0.10

G

0.40 TYP

H

1.7 MAX

J

0.7 MIN

K

0.5+0.15/-0.10

1. BASE

2. COLLECTOR

3. EMITTER

Parameter

Symbol

Rating

Unit

Collector to Base Voltage

VCBO

160

V

Collector to Emitter Voltage

VCEO

160

V

Emitter to Base Voltage

VEBO

6.0

V

Collector Current-Continuous

IC

1.0

A

Collector Base-Continuous

IB

0.5

A

Collector Power Dissipation

PC

500

mW

Junction Temperature

Tj

150

℃

Storage Temperature Range

Tstg

-55～150

℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector to Emitter Breakdown

Voltage

VCEO

IC=10mA

IB=0

160

V

Collector Cut-Off Current

ICBO

VCB=150V

IE=0

1.0

μA

Emitter Base Cut-Off Current

IEBO

VEB=6.0V

IC=0

1.0

μA

DC Current Gain

hFE

VCE=5.0V

IC=200mA

60

320

Collector to Emitter Saturation

Voltage

VCE(sat)

IC=500mA

IB=50mA

1.5

V

Emitter to Base Saturation Voltage

VBE

VCE=5.0V

IC=5.0mA

0.45

0.75

V

Transition Frequency

fT

VCE=5.0V

IC=200mA

20

100

MHz

Collector Output Capacitance

Cob

VCB=10V

IE=0

f=1.0MHz

20

pF

Absolute Maximum Ratings(Ta=25

℃)

Electrical Characteristics(Ta=25

℃)

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