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2SC2235 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SC2235 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() isc website:www.iscsemi.cn isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor 2SC2235 DESCRIPTION · Collector-Emitter Breakdown Voltage :VCEO= 120V(Min) · DC Current Gain : hFE= 80-240@ (VCE= 5V, IC= 0.1A) · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · TV Horizontal Deflection Output Application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 0.8 A PC Collector Power Dissipation @ TC=25℃ 900 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
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