MMSD4148 datasheet(2/5 Pages) ONSEMI

2 / 5 page

MMSD4148, SMMSD4148

www.onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Reverse Breakdown Voltage

(IBR = 100 mA)

V(BR)

100

−

Reverse Voltage Leakage Current

(VR = 20 V)

(VR = 75 V)

−

5.0

Forward Voltage

(IF = 10 mA)

−

1000

Diode Capacitance

(VR = 0 V, f = 1.0 MHz)

−

4.0

Reverse Recovery Time

(IF = IR = 10 mA) (Figure 1)

trr

−

4.0

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.

2. Input pulse is adjusted so IR(peak) is equal to 10 mA.

3. tp » trr

+10 V

2 k

820 W

0.1 mF

DUT

100 mH

0.1 mF

50 W OUTPUT

PULSE

GENERATOR

50 W INPUT

SAMPLING

OSCILLOSCOPE

10%

90%

trr

iR(REC) = 1 mA

OUTPUT PULSE

(IF = IR = 10 mA; measured

at iR(REC) = 1 mA)

INPUT SIGNAL

Figure 1. Recovery Time Equivalent Test Circuit

MMSD4148 Scheda tecnica(PDF) 2 Page - ON Semiconductor

MMSD4148 Scheda tecnica(HTML) 2 Page - ON Semiconductor

Html Pages

1 2 3 4 5

Scheda tecnica Scarica

Link URL