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HT9172 Scheda tecnica(PDF) 3 Page - Holtek Semiconductor Inc |
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HT9172 Scheda tecnica(HTML) 3 Page - Holtek Semiconductor Inc |
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3 / 13 page ![]() Approximate Internal Connection Circuits Absolute Maximum Ratings Supply Voltage ..............................VSS -0.3V to VSS+6V Storage Temperature ............................ -50°Cto125°C Input Voltage..............................VSS -0.3V to VDD+0.3V Operating Temperature........................... -40°Cto85°C Note: These are stress ratings only. Stresses exceeding the range specified under ²Absolute Maximum Ratings² may cause substantial damage to the device. Functional operation of this device at other conditions beyond those listed in the specification is not implied and prolonged exposure to extreme conditions may affect device reliabil- ity. D.C. Characteristics Ta=25 °C Symbol Parameter Test Conditions Min. Typ. Max. Unit VDD Conditions VDD Operating Voltage ¾¾ 2.5 5 5.5 V IDD Operating Current 5V ¾¾ 37 mA ISTB Standby Current 5V VPWDN=VDD, (Not include PWDN pull-low current) ¾ 15 mA VIL Input Low Voltage 5V ¾¾ ¾ 1.0 V VIH Input High Voltage 5V ¾ 4.0 ¾¾ V IIL Input Low Current 5V VVP=VVN=0V ¾¾ 0.1 mA IIH Input High Current 5V VVP=VVN=5V ¾¾ 0.1 mA ROE Pull-high Resistance (OE) 5V VOE=0V 70 110 160 k W RPL Pull-low Resistance (INH, PWDN) 5V VINH=5.0V, VPWDN=5.0V 150 250 375 k W RIN Input Impedance (VN, VP) 5V ¾¾ 10 ¾ M W IOH Source Current (D0~D3, EST, DV) 5V VOUT =4.5V -0.4 -0.8 ¾ mA IOL Sink Current (D0~D3, EST, DV) 5V VOUT =0.5V 1.0 2.5 ¾ mA fOSC System Frequency 5V Crystal=3.5795MHz 3.5759 3.5795 3.5831 MHz HT9172 Rev. 1.00 3 March 30, 2006 V - V + O P E R A T I O N A L A M P L I F I E R V N V P G S X 1 X 2 O S C I L L A T O R C M O S I N P u l l - h i g h C M O S O U T T r i s t a t e E N C M O S O U T C M O S I N / O U T V R E F O P A O P A 2 0 p F 1 0 M 1 0 p F C M O S I N P u l l - l o w |
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