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STRH12P10 Scheda tecnica(PDF) 1 Page - STMicroelectronics |
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STRH12P10 Scheda tecnica(HTML) 1 Page - STMicroelectronics |
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1 / 15 page ![]() TO-257 AA 2 1 3 The case is not connected to any lead D(1) G(3) S(2) SCO6140p Features VDS ID RDS(on) typ. Qg 100 V 12 A 265 mΩ 40 nC • Fast switching • 100% avalanche tested • Hermetic package • 100 krad TID • SEE radiation hardened Description The STRH12P10 is a P-channel Power MOSFET able to operate under severe environment conditions and radiation exposure. It provides high reliability performance and immunity to the total ionizing dose (TID) and single event effects (SEE). Qualified as per ESCC detail specification No. 5205/029 and available in TO-257AA hermetic package, it is specifically recommended for space and harsh environment applications and suitable for in-Satellite power conversion, motor control and power switch circuits. In case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence. Product summary Product summary Part numbers Quality level ESCC part number Package Lead finish Radiation level STRH12P10GY1 Engineering model - TO-257AA Gold - STRH12P10GYG ESCC flight 5205/029 100 krad STRH12P10GYT Solder dip 100 krad Note: See Table 8 for ordering information. Product status link STRH12P10 Rad-Hard 100 V, 12 A, P-channel Power MOSFET STRH12P10 Datasheet DS8699 - Rev 9 - May 2022 For further information contact your local STMicroelectronics sales office. www.st.com |
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