DocID026111 Rev 1

3/10

LCP02

Characteristics

10

Figure 3. Pulse waveform

100

50

%I

PP

t

t

r

p

0

t

Table 3. Thermal resistance

Symbol

Parameter

Value

Unit

Rth(j-a)

Junction to ambient

150

°C/W

Table 4. Parameters related to the negative suppressor

Symbol

Parameter

Test conditions

Min.

Max.

Unit

IGn

Negative gate trigger current

VGn/GND = -60 V

Measured at 50 Hz

5mA

IH-

Holding current (see Figure 4)VGn = -60 V

150

mA

VDGL-

Dynamic switching voltage Gn / TIP or

RING(1)

VGn/GND = -60 V

V

10/700 µs

1.2/50 µs

2 kV

2 kV

Rs = 25 Ω

Rs = 25 Ω

IPP = 30 A

IPP = 30 A

8

15

1.

The VDGL value is the difference between the peak line voltage during the surge and the programmed gate voltage.

Table 5. Parameters related to the positive suppressor

Symbol

Parameter

Test conditions

Min. Max. Unit

IGp

Positive gate trigger current

VGp/GND = 60 V, measured at 50 Hz

5

mA

VDGL+

Dynamic switching voltage Gp / TIP or

RING(1)

VGp/GND = 60 V

V

10/700 µs

1.2/50 µs

2 kV

2 kV

Rs = 25 Ω

Rs = 25 Ω

IPP = 30 A

IPP = 30 A

8

35

1.

The VDGL value is the difference between the peak line voltage during the surge and the programmed gate voltage.

Table 6. Parameters related to TIP or RING / GND

Symbol

Parameter

Test conditions

Min.

Max.

Unit

IR

Reverse leakage current

VTIP or RING = +120 V

VTIP or RING = -120 V

VGp/TIP or RING= +1 V

VGn/TIP or RING= -1 V

5

5

µA

C

Capacitance TIP or RING / GND

VR = -3 V, F =1 MHz, VGp = 60 V, VGn = -60 V

60

pF