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STAC4932F1MR Scheda tecnica(PDF) 2 Page - STMicroelectronics |
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STAC4932F1MR Scheda tecnica(HTML) 2 Page - STMicroelectronics |
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2 / 16 page ![]() 1 Electrical data 1.1 Maximum ratings Table 1. Absolute maximum ratings (TCASE = 25 °C) Symbol Parameter Value Unit V(BR)DSS Drain source voltage 200 V VDGR Drain-gate voltage (RGS = 1 MΩ) 200 V VGS Gate-source voltage ±20 V TJ Maximum operating junction temperature 200 °C TSTG Storage temperature range -65 to +150 °C 1.2 Thermal data Table 2. Thermal data Symbol Parameter Value Unit RthJC Junction-case thermal resistance 0.28 °C/W 1.3 ESD protection characteristics Table 3. ESD protection Symbol Test Methodology Class HBM Human Body Model (per JESD22-A114) 1C STAC4932F1MR Electrical data DS9904 - Rev 2 page 2/16 |
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