L3751 datasheet(10/41 Pages) STMICROELECTRONICS

10 / 41 page

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IRDSON

ILIM source current, RDS(on) mode

SW voltage detected at ILIM, TJ = 25 °C

180

200

220

µA

IRSTC (1)

ILIM current temperature

compensation

RDS-ON mode

4500

ppm/°

RSENSE mode

VILIM-TH

ILIM comparator threshold at ILIM

-9

-2

4.5

Short-circuit protection (SCP)

VCLAMP-OS

Clamp offset voltage – no current

limiting

CLAMP to COMP steady-state offset voltage;

-40 ≤ TJ ≤ +125 °C

0.2 +

VVIN/150

VCLAMP-MIN Minimum clamp voltage

CLAMP voltage with continuous current limiting;

-40 ≤ TJ ≤ +125 °C

0.3 +

VVIN/300

Short-circuit protection (SCP)

CHICC-DEL Hiccup mode activation delay

Clock cycles with current limiting before hiccup

off-time activated

128

cycles

CHICCUP

Hiccup mode off-time after activation

Clock cycles with no switching followed by

SS/TRK release

8192

cycles

Diode Emulation

VZCD-SS

Zero-cross detect (ZCD) soft-start

ramp

ZCD threshold measured at SW pin

50 clock cycles after first HO pulse

VZCD-DIS

Zero-cross detect disable threshold

(CCM)

ZCD threshold measured at SW pin

1000 clock cycles after first HO pulse

200

VDEM-TH

Diode emulation zero-cross threshold Measured at SW with VSW rising

-7

-2

Gate Drivers

RHO-UP

HO high-state resistance, HO to BST VBST – VSW = 7 V, IHO = –100 mA

1.5

Ω

RHO-DOWN

RHO-DOWN HO low-state resistance,

HO to SW

VBST – VSW = 7 V, IHO = 100 mA

0.9

Ω

RLO-UP

LO high-state resistance, LO to VCC

VBST – VSW = 7 V, ILO = –100 mA

1.5

Ω

RLO-DOWN LO low-state resistance, LO to PGND VBST – VSW = 7 V, ILO = 100 mA

0.9

Ω

IHOH, ILOH

(1)

HO, LO source current

VBST – VSW = 7 V, HO = SW, LO = AGND

2.3

IHOL, ILOL

(1)

HO, LO sink current

VBST – VSW = 7 V, HO = BST, LO = VCC

3.5

THO-TR,

TLO-TR

HO, LO rise times

VBST – VSW = 7 V, CLOAD = 1 nF, 20% to 80%

THO-TF

TLO-TF

HO, LO fall times

VBST – VSW = 7 V, CLOAD = 1 nF, 80% to 20%

THO-DT (1)

HO turn-on deadtime

VBST – VSW = 7 V, LO off to HO on, 50% to 50%

TLO-DT (1)

LO turn-on deadtime

VBST – VSW = 7 V, HO off to LO on, 50% to 50%

Thermal protection

TSD

Thermal shutdown threshold

TJ rising

175

°C

TSD-HYS

Thermal shutdown hysteresis

°C

1. Specified by design – not tested in production.

Note:

All minimum and maximum limits are specified by correlating the electrical characteristics to process and

temperature variations and applying statistical process control.

L3751

Electrical characteristics

DS13841 - Rev 1

page 10/41

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