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L99MOD53XP Scheda tecnica(PDF) 15 Page - STMicroelectronics

Il numero della parte L99MOD53XP
Spiegazioni elettronici  Multi-output driver for automotive applications
PDF  35 Pages
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

L99MOD53XP Scheda tecnica(HTML) 15 Page - STMicroelectronics

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DS12617 Rev 5
15/35
L99MOD53XP
Electrical specifications
34
tCLKL
Clock low time
VCC = 5 V
400
ns
tset CSN
CSN setup time, CSN low before
rising edge of CLK
VCC = 5 V
400
ns
tset CLK
CLK setup time, CLK high before
rising edge of CSN
VCC = 5 V
400
ns
tset DI
DI setup time
VCC = 5 V
200
ns
thold time
DI hold time
VCC = 5 V
200
ns
tr in
Rise time of input signal DI, CLK,
CSN
VCC = 5 V
100
ns
tf in
Fall time of input signal DI, CLK,
CSN
VCC = 5 V
100
ns
1. DI timing parameters tested in production by a passed / failed test:
Tj= -40°C / +25°C: SPI communication @ 2 MHz.
Tj= +125°C SPI communication @ 1.25 MHz.
Table 14. DI timing (continued)
Symbol
Parameter(1)
Test condition
Min.
Typ.
Max.
Unit
Table 15. DO
Symbol
Parameter
Test condition
Min.
Typ.
Max.
Unit
VDOL
Output low level
VCC = 5 V, ID = -2 mA
0.2
0.4
V
VDOH
Output high level
VCC = 5 V, ID = 2 mA
VCC -0.4
VCC-0.2
V
IDOLK
3-state leakage current
VCSN = VCC,
0 V < VDO < VCC
-10
10
µA
CDO (1)
3-state input capacitance
VCSN = VCC,
0 V < VCC < 5.3 V
10
15
pF
1. Value of input capacity is not measured in production test. Parameter guaranteed by design.
Table 16. DO timing
Symbol
Parameter
Test condition
Min.
Typ.
Max.
Unit
tr DO
DO rise time
CL = 100 pF, Iload = -1 mA
80
140
ns
tf DO
DO fall time
CL = 100 pF, Iload = 1 mA
50
100
ns
ten DO tri L
DO enable time
from 3-state to low level
CL = 100 pF, Iload = 1 mA
pull-up load to VCC
100
250
ns
tdis DO L tri
DO disable time
from low level to 3-state
CL = 100 pF, Iload = 4 mA
pull-up load to VCC
380
450
ns
ten DO tri H
DO enable time
from 3-state to high level
CL =100 pF, Iload = -1 mA
pull-down load to GND
100
250
ns
tdis DO H tri
DO disable time
from high level to 3-state
CL = 100 pF, Iload = -4 mA
pull-down load to GND
380
450
ns
td DO
DO delay time
VDO < 0.3 VCC, VDO > 0.7 VCC,
CL = 100 pF
50
250
ns



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