STW35N65DM2 datasheet(2/12 Pages) STMICROELECTRONICS

Il numero della parte	STW35N65DM2

Spiegazioni elettronici	N-channel 650 V, 93 m typ., 32 A MDmesh DM2 Power MOSFET in a TO-247 package

PDF	12 Pages

Scroll/Zoom	100%

Produttore elettronici	STMICROELECTRONICS [STMicroelectronics]

Homepage	http://www.st.com

Logo

2 / 12 page

Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage (static)

±25

Gate-source voltage (dynamic AC (f > 1 Hz))

±30

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

IDM (1)

Drain current (pulsed)

PTOT

Total power dissipation at TC = 25 °C

250

dv/dt(2)

Peak diode recovery voltage slope

100

V/ns

di/dt(2)

Peak diode recovery current slope

1000

A/μs

dv/dt(3)

MOSFET dv/dt ruggedness

100

V/ns

Tstg

Storage temperature

-55 to 150

°C

Operating junction temperature

1. Pulse width is limited by safe operating area.

2. ISD ≤ 32 A, VDS peak < V(BR)DSS, VDD = 80% V(BR)DSS.

3. VDS ≤ 520 V.

Table 2. Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case

0.5

°C/W

Rthj-amb

Thermal resistance junction-ambient

°C/W

Table 3. Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not repetitive

EAS (1)

Single pulse avalanche energy

1150

1. Starting TJ = 25 °C, ID = IAR, VDD = 50 V.

STW35N65DM2

Electrical ratings

DS12247 - Rev 3

page 2/12

STW35N65DM2 Scheda tecnica(PDF) 2 Page - STMicroelectronics

STW35N65DM2 Scheda tecnica(HTML) 2 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

Scheda tecnica Scarica

Link URL