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STF18N65DM2 Scheda tecnica(PDF) 4 Page - STMicroelectronics

Il numero della parte STF18N65DM2
Spiegazioni elettronici  N-channel 650 V, 231 m typ., 12 A, MDmesh DM2 Power MOSFET in a TO-220FP package
PDF  12 Pages
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STF18N65DM2 Scheda tecnica(HTML) 4 Page - STMicroelectronics

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Table 7. Source-drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain current
-
12
A
ISDM(1)
Source-drain current (pulsed)
-
36
A
VSD(2)
Forward on voltage
VGS = 0 V, ISD = 12 A
-
1.6
V
trr
Reverse recovery time
ISD = 12 A, di/dt = 100 A/µs,
VDD = 100 V
(see Figure 15. Test circuit for
inductive load switching and diode
recovery times)
-
89
ns
Qrr
Reverse recovery charge
-
342
nC
IRRM
Reverse recovery current
-
6.4
A
trr
Reverse recovery time
ISD = 12 A, di/dt = 100 A/µs,
VDD = 100 V, TJ = 150 °C
(see Figure 15. Test circuit for
inductive load switching and diode
recovery times)
-
198
ns
Qrr
Reverse recovery charge
-
1340
nC
IRRM
Reverse recovery current
-
10
A
1. Pulse width is limited by safe operating area.
2. Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
STF18N65DM2
Electrical characteristics
DS12957 - Rev 2
page 4/12



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