STN6N60M2 datasheet(2/13 Pages) STMICROELECTRONICS

Il numero della parte	STN6N60M2

Spiegazioni elettronici	N-channel 600 V, 1.00 typ., 5.5 A MDmesh M2 Power MOSFET in an SOT223-2 package

PDF	13 Pages

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Produttore elettronici	STMICROELECTRONICS [STMicroelectronics]

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Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

±25

ID (1)

Drain current (continuous) at TC = 25 °C

5.5

ID (1)

Drain current (continuous) at TC = 100 °C

3.5

IDM (2)

Drain current (pulsed)

PTOT

Total power dissipation at TS = 25 °C

dv/dt(3)

Peak diode recovery voltage slope

V/ns

dv/dt(4)

MOSFET dv/dt ruggedness

Operating junction temperature range

-55 to 150

°C

Tstg

Storage temperature range

1. Limited by maximum junction temperature.

2. Pulse width limited by safe operating area.

3. ISD ≤ 5.5 A, di/dt = 400 A/μs; VDS(peak) < V(BR)DSS, VDD = 400 V

4. VDS ≤ 480 V

Table 2. Thermal data

Symbol

Parameter

Value

Unit

Rthj-S

Thermal resistance junction-solder point

°C/W

Rthj-pcb (1)

Thermal resistance junction-pcb

°C/W

1. When mounted on 1 inch² FR-4, 2 Oz copper board.

Table 3. Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not repetitive

(pulse width limited by Tjmax.)

0.8

EAS

Single pulse avalanche energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

STN6N60M2

Electrical ratings

DS12926 - Rev 2

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