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KSH13009 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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KSH13009 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() 1 isc Website:www.iscsemi.com isc & iscsemi is registered trademark isc Silicon NPN Power Transistor KSH13009 DESCRIPTION · Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) · Collector Saturation Voltage : VCE(sat) = 1.5 (Max) @ IC= 8.0A · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Suited for switchingregulators,inverters,Motor controls, Solenoid/Relay drivers and deflection circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 12 A IB Base Current 6 A PC Collector Power Dissipation TC=25℃ 100 W Ti Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
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