3236 Scott Boulevard

Santa Clara, California 95054

Phone: (408) 986-5060

Fax: (408) 986-5095

2.0 to 20.0 GHz

GaAs MMIC

1W Power Amplifier

Advanced Product Information

August 2004

(1 of 4)

Features

❏ Small Size: 2.32 x 1.30 x 0.076 mm

❏ Integrated On-Chip DC Blocking

❏ Single Bias Operation

❏ Directly Cascadable – Fully Matched

❏ Unconditionally Stable

❏ P1dB: 29 dBm, Typ. @ 18 GHz

❏ Linear Gain: 9.5 dB, Typ. @ 18 GHz

❏ pHEMT Technology

❏ Silicon Nitride Passivation

Parameters

Units

Min

Typ

Max

Frequency Range

GHz

2.0

20.0

Linear Gain

dB

8.5

12.5

Gain Flatness

±dB

1.5

Power Output: 2-18 GHz (@1 dB Gain Compression)

dBm

28.5

Power Output: 2-20 GHz (@1 dB Gain Compression)

dBm

26.5

P1dB Variation (over operating frequency)

dBm

5.0

Saturated Output Power: 2-18 GHz

dBm

29.5

Saturated Output Power: 2-20 GHz

dBm

27.5

Input Return Loss

dB

-10.0

Output Return Loss

dB

-10.0

Current

mA

650

690

730

Thermal Resistance

°C/W

15.7

Stability 2

Unconditionally Stable

Parameter

Rating

Drain Voltage

9.0V (min.) / 13.0V (max.)

Drain Current

750 mA

Continuous Power Dissipation

9.5 W

Input Power

20 dBm

Storage Temperature

-50°C to +150°C

Channel Temperature

175°C

Operating Backside Temperature

-40°C to (See note 2)

Die Attach and Bonding Procedures

Die Attach: Eutectic die attach is recommended. For eutec-

tic die attach: Preform: AuSn (80% Au, 20% Sn); Stage

Temperature: 290°C, ±5°C; Handling Tool: Tweezers; Time: 1

min or less.

Wire Bonding: Wire Size: 0.7 to 1.0 mil in diameter (pre-

stressed); Thermocompression bonding is preferred over

thermosonic bonding.

For thermocompression bonding:

Stage Temperature: 250°C; Bond Tip Temperature: 150°C;

Bonding Tip Pressure: 18 to 40 gms depending on size of

wire.

CMM0016-BD

Chip Diagram

Notes: 1. Operation outside these limits can cause permanent damage.

2. Calculation maximum operating temperature:

Tmax = 175–(Pdis [W] x 15.7) [°C].

Units: mm

Notes: 1. Tested on Celeritek Connectorized evaluation board (standard assembly condition detailed on page 4).

2. Stability factor measured on-wafer.