NTMFS4922NET1G datasheet(4/8 Pages) ONSEMI

Il numero della parte	NTMFS4922NET1G

Spiegazioni elettronici	Power MOSFET 30 V, 147 A, Single N−Channel, SO−8 FL

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Produttore elettronici	ONSEMI [ON Semiconductor]

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NTMFS4922NE

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TYPICAL CHARACTERISTICS

100

120

140

160

180

0123

VGS = 3.4 V

2.2 V

2.4 V

2.6 V

2.8 V

3.0 V

3.2 V

3.6 V to 10 V

TJ = 25°C

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 1. On−Region Characteristics

100

120

140

160

180

1.5

2.5

3.5

TJ = 25°C

TJ = −55°C

TJ = 125°C

Figure 2. Transfer Characteristics

VGS, GATE−TO−SOURCE VOLTAGE (V)

0.0014

0.0016

0.0018

0.0020

0.0022

0.0024

0.0026

0.0028

56789

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

VGS, GATE−TO−SOURCE VOLTAGE (V)

ID = 30 A

TJ = 25°C

0.0026

0.0012

0.0014

0.0016

0.0018

0.0020

0.0022

0.0024

100

120

140

160 180

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

ID, DRAIN CURRENT (A)

VGS = 4.5 V

VGS = 10 V

TJ = 25°C

0.6

0.7

0.8

0.9

1.1

1.2

1.3

1.4

1.5

1.6

1.7

−50

−25

100

125

150

Figure 5. On−Resistance Variation with

Temperature

TJ, JUNCTION TEMPERATURE (°C)

ID = 30 A

VGS = 10 V

100

1000

10000

100000

1015202530

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

VGS = 0 V

TJ = 150°C

TJ = 125°C

TJ = 85°C

VDS = 10 V

200

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