Preliminary Data

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to

change without notice.

January 2009

Rev 1

1/13

13

STB140N10F4, STF140N10F4

STP140N10F4

N-channel 100 V, 5.2 m

Ω, 60 A TO-220, D2PAK, TO-220FP

STripFET™ DeepGATE™ Power MOSFET

Features

■ Exceptional dv/dt capability

■ Extremely low on-resistance RDS(on)

■ 100% avalanche tested

Application

■ Switching applications

Description

This Power MOSFET is among the latest

developments that use an advanced technology

(STripFET™ DeepGATE™ technology), which

has been especially tailored to minimize on-state

resistance, provide superior switching

performance and withstand high energy pulse in

avalanche and commutation mode. The resulting

transistor shows extremely high packing density

for low on-resistance, rugged avalanche

characteristics and less critical alignment steps

therefore a remarkable manufacturing

reproducibility.

Figure 1.

Internal schematic diagram

Type

VDSS

RDS(on) max

ID

STB140N10F4

100 V

< 6.5 m

Ω

140 A

STF140N10F4

100 V

< 6.5 m

Ω

55 A

STP140N10F4

100 V

< 6.5 m

Ω

140 A

1

2

3

1

2

3

1

3

TO-220FP

TO-220

D²PAK

Table 1.

Device summary

Order codes

Marking

Package

Packaging

STB140N10F4

140N10F4

D²PAK

Tape and reel

STF140N10F4

140N10F4

TO-220FP

Tube

STP140N10F4

140N10F4

TO-220

Tube

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