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STF40N60M2 Scheda tecnica(PDF) 3 Page - STMicroelectronics

Il numero della parte STF40N60M2
Spiegazioni elettronici  N-channel 600 V, 0.078 Ω typ., 34 A MDmesh M2 Power MOSFETs in TO-220FP, I2PAKFP and TO-3PF packages
PDF  18 Pages
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STF40N60M2 Scheda tecnica(HTML) 3 Page - STMicroelectronics

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DocID026364 Rev 2
3/18
STF40N60M2, STFI40N60M2, STFW40N60M2
Electrical ratings
18
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
TO-220FP,
I2PAKFP
TO-3PF
VGS
Gate-source voltage
± 25
V
ID
(1)
1.
Limited by maximum junction temperature
Drain current (continuous) at TC = 25 °C
34
A
ID
(1)
Drain current (continuous) at TC = 100 °C
22
A
IDM
(1),(2)
2.
Pulse width limited by safe operating area.
Drain current (pulsed)
136
A
PTOT
Total dissipation at TC = 25 °C
40
63
W
dv/dt (3)
3.
ISD ≤ 34 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD=400 V.
Peak diode recovery voltage slope
15
V/ns
dv/dt(4)
4.
VDS ≤ 480 V
MOSFET dv/dt ruggedness
50
V/ns
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1 s; TC=25 °C)
2500
3500
V
Tstg
Storage temperature range
- 55 to 150
°C
Tj
Operating junction temperature range
°C
Table 3. Thermal data
Symbol
Parameter
Value
Unit
TO-220FP,
I2PAKFP
TO-3PF
Rthj-case Thermal resistance junction-case
3.13
2.00
°C/W
Rthj-amb Thermal resistance junction-ambient
62.5
50
°C/W
Table 4. Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetitive or not
repetitive (pulse width limited by Tjmax)
6A
EAS
Single pulse avalanche energy (starting
Tj=25°C, ID= IAR; VDD=50 V)
500
mJ



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