DocID024475 Rev 1

5/17

STFILED625H, STPLED625H, STULED625H

Electrical characteristics

The built-in back-to-back Zener diodes have been specifically designed to enhance not only

the device’s ESD capability, but also to make them capable of safely absorbing any voltage

transients that may occasionally be applied from gate to source. In this respect, the Zener

voltage is appropriate to achieve efficient and cost-effective protection of device integrity.

The integrated Zener diodes thus eliminate the need for external components.

Table 7.

Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max

Unit

ISD

ISDM

(1)

1.

Pulse width limited by safe operating area

Source-drain current

Source-drain current (pulsed)

-

3.8

15.2

A

A

VSD

(2)

2.

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

ISD = 5.4 A, VGS = 0

-

1.6

V

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 5.4 A, di/dt = 100 A/µs

VDD= 60 V

(see Figure 22)

-

220

1.4

13

ns

µC

A

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 5.4 A, di/dt = 100 A/µs

VDD= 60 V TJ = 150 °C

(see Figure 22)

-

270

1.9

14

ns

µC

A

Table 8. Gate-source Zener diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

V(BR)GSO

Gate-source breakdown

voltage

IGS= ± 1 mA, ID=0

30

-

-

V

Obsolete

Product(s)

- Obsolete

Product(s)