STGD3HF60WD datasheet(3/10 Pages) STMICROELECTRONICS

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STGD3HF60WD

Electrical characteristics

Doc ID 16582 Rev 1

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Electrical characteristics

(Tj=25 °C unless otherwise specified)

Table 4.

Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)CES

Collector-emitter

breakdown voltage

(VGE = 0)

IC = 1 mA

600

VCE(sat)

Collector-emitter

saturation voltage

VGE= 15 V, IC= 0.5 A, Tj=125°C

VGE = 15 V, IC= 1.5 A

VGE= 15 V, IC= 1.5 A, Tj=125°C

1.3

2.3

1.8

VGE(th)

Gate threshold voltage

VCE= VGE, IC= 250 µA

3.75

5.75

ICES

Collector cut-off current

(VGE = 0)

VCE = 600 V

VCE = 600 V, Tj= 125 °C

250

µA

IGES

Gate-emitter leakage

current (VCE = 0)

VGE = ±20 V

±100

gfs

Forward

transconductance

VCE = 15 V, IC= 1.5 A

TBD

Table 5.

Dynamic electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Cies

Coes

Cres

Input capacitance

Output capacitance

Reverse transfer

capacitance

VCE = 25 V, f = 1 MHz,

VGE = 0

TBD

Qge

Qgc

Total gate charge

Gate-emitter charge

Gate-collector charge

VCE = 390 V, IC = 1.5 A,

VGE = 15 V

(see Figure 3)

TBD

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