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MBR7H35 Scheda tecnica(PDF) 3 Page - Vaishali Semiconductor

Il numero della parte MBR7H35
Spiegazioni elettronici  Schottky Barrier Rectifiers
PDF  3 Pages
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Produttore elettronici  VAISH [Vaishali Semiconductor]
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MBR7H35 Scheda tecnica(HTML) 3 Page - Vaishali Semiconductor

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MBR7Hxx, MBRF7Hxx & MBRB7Hxx Series
Vishay Semiconductors
formerly General Semiconductor
Document Number 88796
www.vishay.com
14-Mar-03
3
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
1
10
100
25
50
75
100
125
150
175
Fig. 3 – Typical Instantaneous
Forward Characteristics
Fig. 5 – Typical Junction
Capacitance
Fig. 6 – Typical Transient
Thermal Impedance
Number of Cycles at 60 HZ
Reverse Voltage (V)
0
2
4
6
8
10
025
50
75
100
125
150
175
Fig. 1 – Forward Current
Derating Curve
Case Temperature (
°C)
Fig. 2 – Maximum Non-Repetitive
Peak Forward Surge Current
0.01
0.1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
0
1
10
100
Instantaneous Forward Voltage (V)
020
60
40
100
80
0.0001
0.001
0.1
0.01
1
10
Fig. 4 – Typical Reverse
Characteristics
Percent of Rated Peak Reverse Voltage (%)
t, Pulse Duration (sec.)
0.01
0.1
0.1
1
1.0
10
10
1
0.1
10
100
100
1000
10
1
MBR7H35 -- MBR7H45
MBR7H50 -- MBR7H60
MBR7H35 -- MBR7H45
MBR7H50 -- MBR7H60
TJ = 150
°C
TJ = 150
°C
TJ = 125
°C
TJ = 25
°C
TJ = 125
°C
TJ = 25
°C
TJ = TJ max.
8.3ms Single Half Sine-Wave
(JEDEC Method)
MBR7H35 -- MBR7H45
MBR7H50 -- MBR7H60
TJ = 25
°C
f = 1.0 MHZ
Vsig = 50mVp-p
MBRF
MBR, MBRB



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