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AP13P15GP Scheda tecnica(PDF) 2 Page - Advanced Power Electronics Corp.

Il numero della parte AP13P15GP
Spiegazioni elettronici  P-CHANNEL ENHANCEMENT MODE POWER MOSFET
PDF  4 Pages
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Produttore elettronici  A-POWER [Advanced Power Electronics Corp.]
Homepage  http://www.a-power.com.tw
Logo A-POWER - Advanced Power Electronics Corp.

AP13P15GP Scheda tecnica(HTML) 2 Page - Advanced Power Electronics Corp.

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AP13P15GS/P
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-1mA
-150
-
-
V
ΔBV
DSS/ΔTj
Breakdown Voltage Temperature Coefficient
Reference to 25℃, ID=-1mA
-
-0.1
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=-10V, ID=-7A
-
-
300
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-7A
-
6
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=-150V, VGS=0V
-
-
-25
uA
Drain-Source Leakage Current (Tj=150
oC)
VDS=-120V, VGS=0V
-
-
-100
uA
IGSS
Gate-Source Leakage
VGS= ±20V
-
-
±100
nA
Qg
Total Gate Charge
2
ID=-7A
-
38
60
nC
Qgs
Gate-Source Charge
VDS=-120V
-
5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-10V
-
15
-
nC
td(on)
Turn-on Delay Time
2
VDS=-75V
-
11
-
ns
tr
Rise Time
ID=-7A
-
21
-
ns
td(off)
Turn-off Delay Time
RG=10Ω,VGS=-10V
-
60
-
ns
tf
Fall Time
RD=10.7Ω
-36
-
ns
Ciss
Input Capacitance
VGS=0V
-
1210
1940
pF
Coss
Output Capacitance
VDS=-25V
-
220
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
60
-
pF
Rg
Gate Resistance
f=1.0MHz
-
3.5
5
Ω
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VSD
Forward On Voltage
2
IS=-7A, VGS=0V
-
-
-1.3
V
trr
Reverse Recovery Time
2
IS=-7A, VGS=0V,
-
110
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/µs
-
620
-
nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
2/4



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