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STM32W108CB Scheda tecnica(PDF) 255 Page - STMicroelectronics |
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STM32W108CB Scheda tecnica(HTML) 255 Page - STMicroelectronics |
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255 / 278 page ![]() STM32W108HB STM32W108CC STM32W108CB STM32W108CZ Electrical characteristics Doc ID 16252 Rev 14 255/278 ARM® Cortex-M3, RAM, and Flash memory 25 °C, 1.8 V memory and 1.25 V core ARM® Cortex-M3 running at 24 MHz from crystal oscillator Radio and all peripherals off –7.5 – mA ARM® Cortex-M3, RAM, and Flash memory sleep current 25 °C, 1.8 V memory and 1.25 V core ARM® Cortex-M3 clocked at 12 MHz from the crystal oscillator Radio and all peripherals off –3.0 – mA ARM® Cortex-M3, RAM, and Flash memory sleep current 25 °C, 1.8 V memory and 1.25 V core ARM® Cortex-M3 clocked at 6 MHz from the high frequency RC oscillator Radio and all peripherals off –2.0 – mA Serial controller current For each controller at maximum data rate –0.2 – mA General purpose timer current For each timer at maximum clock rate –0.25 – mA General purpose ADC current At maximum sample rate, DMA enabled –1.1 – mA Rx current Radio receiver, MAC, and baseband ARM® Cortex-M3 sleeping –22.0 – mA Total RX current ( = IRadio receiver, MAC and baseband, CPU + IRAM, and Flash memory ) VDD_PADS = 3.0 V, 25 °C, ARM® Cortex-M3 running at 12 MHz –25.0 – mA VDD_PADS = 3.0 V, 25 °C, ARM® Cortex-M3 running at 24 MHz –26.5 – mA Boost mode total RX current ( = IRadio receiver, MAC and baseband, CPU+ IRAM, and Flash memory ) VDD_PADS = 3.0 V, 25 °C, ARM® Cortex-M3 running at 12 MHz –27.0 – mA VDD_PADS = 3.0 V, 2 5°C, ARM® Cortex-M3 running at 24 MHz –28.5 – mA Tx current Radio transmitter, MAC, and baseband 25 °C and 1.8 V core; max. power out (+3 dBm typical) ARM® Cortex-M3 sleeping –26.0 – mA Table 64. DC electrical characteristics (continued) Parameter Conditions Min. Typ. Max. Unit |
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