DYNAMIC CHARACTERISTICS (per section)

ARF473

Symbol

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Test Conditions

V

V

f = 1 MHz

V

V

I

R

MIN

TYP

MAX

1200

1600

140

200

912

5.1

10

4.1

8

12.8

20

4.0

8

UNIT

pF

ns

Symbol

G

PS

η

ψ

Test Conditions

f = 130MHz

I

V

No Degradation in Output Power

Characteristic

Common Source Amplifier Power Gain

Drain Efficiency

Electrical Ruggedness VSWR 5:1

MIN

TYP

MAX

13

14

50

55

UNIT

dB

%

APT Reserves the right to change, without notice, the specifications and information contained herein.

FREQUENCY (MHz)

Figure 1, Typical Gain vs. Frequency

26

24

22

20

18

16

14

12

10

0

25

50

75

100

125

150

Class AB

V

P

1

5

10

50 100

500

Figure 4, Typical Maximum Safe Operating Area

TC =+25°C

TJ =+200°C

SINGLE PULSE

80

10

5

1

1ms

10ms

100us

Per transistor section unless otherwise specified.

DATA FOR BOTH SIDES

IN PARALLEL

OPERATION HERE

LIMITED BY RDS (ON)

DC

100ms

Figure 2, Typical Capacitance vs. Drain-to-Source Voltage

3000

1000

500

100

50

10

.1

.5

1

5

10

50

Ciss

Coss

Crss

12

10

8

6

4

2

0

0123456

Figure 3, Typical Transfer Characteristics

VDS> ID (ON) x RDS (ON)MAX.

250 µSEC. PULSE TEST

@ <0.5 % DUTY CYCLE

TJ = -55°C

TJ = +125°C

TJ = +25°C