MS1227 datasheet(1/3 Pages) ADPOW

Il numero della parte	MS1227

Spiegazioni elettronici	RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

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Produttore elettronici	ADPOW [Advanced Power Technology]

Homepage	http://www.advpowertech.com

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MS1227.PDF 10-28-02

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein

Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

MS1227

RF & MICROWAVE TRANSISTORS

HF SSB APPLICATIONS

DESCRIPTION:

The MS1227 is a 12.5V epitaxial NPN planar transistor designed

primarily for SSB communications. This device utilizes emitter

ballasting for improved ruggedness and reliability.

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

36

V

VCEO

Collector-Emitter Voltage

18

V

VEBO

Emitter-Base Voltage

4.0

V

IC

Device Current

4.5

A

PDISS

Power Dissipation

80

W

TJ

Junction Temperature

+200

°°C

TSTG

Storage Temperature

-65 to +150

°°C

Thermal Data

RTH(J-C)

Junction-case Thermal Resistance

2.2

°°C/W

Features

• 30 MHz

• 12.5 VOLTS

• GOLD METALIZATION

• P

OUT = 20 W MINIMUM

• G

P = 15 dB

• COMMON EMITTER CONFIGURATION

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