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Motore di ricerca datesheet componenti elettronici |
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Motore di ricerca datesheet componenti elettronici |
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APTM50AM24SC Scheda tecnica(PDF) 1 Page - Advanced Power Technology |
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APTM50AM24SC Scheda tecnica(HTML) 1 Page - Advanced Power Technology |
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1 / 7 page  APTM50AM24SC APT website – http://www.advancedpower.com 1 – 7 OUT VBUS S1 G1 0/VBUS G2 S2 Absolute maximum ratings These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. Symbol Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage 500 V Tc = 25°C 150 ID Continuous Drain Current Tc = 80°C 110 IDM Pulsed Drain current 600 A VGS Gate - Source Voltage ±30 V RDSon Drain - Source ON Resistance 24 m Ω PD Maximum Power Dissipation Tc = 25°C 1250 W IAR Avalanche current (repetitive and non repetitive) 24 A EAR Repetitive Avalanche Energy 30 EAS Single Pulse Avalanche Energy 1300 mJ VDSS = 500V RDSon = 24mΩ max @ Tj = 25°C ID = 150A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Low profile Phase leg Series & SiC parallel diodes MOSFET Power Module |
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