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APTM50DDAM65T3 Scheda tecnica(PDF) 1 Page - Advanced Power Technology |
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APTM50DDAM65T3 Scheda tecnica(HTML) 1 Page - Advanced Power Technology |
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1 / 6 page ![]() APTM50DDAM65T3 APT website – http://www.advancedpower.com 1 – 6 14 13 Q1 Q2 23 8 22 7 CR1 CR2 30 29 32 4 26 3 27 31 16 15 R1 16 15 18 20 23 22 13 11 12 14 8 7 29 30 28 27 26 3 32 31 10 19 2 25 4 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Absolute maximum ratings These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. Symbol Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage 500 V Tc = 25°C 51 ID Continuous Drain Current Tc = 80°C 38 IDM Pulsed Drain current 204 A VGS Gate - Source Voltage ±30 V RDSon Drain - Source ON Resistance 65 m Ω PD Maximum Power Dissipation Tc = 25°C 390 W IAR Avalanche current (repetitive and non repetitive) 51 A EAR Repetitive Avalanche Energy 50 EAS Single Pulse Avalanche Energy 3000 mJ VDSS = 500V RDSon = 65mΩ max @ Tj = 25°C ID = 51A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Each leg can be easily paralleled to achieve a single boost of twice the current capability Dual Boost chopper MOSFET Power Module |
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