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APTM120H29F Scheda tecnica(PDF) 2 Page - Advanced Power Technology

Il numero della parte APTM120H29F
Spiegazioni elettronici  Full - Bridge MOSFET Power Module
PDF  6 Pages
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Produttore elettronici  ADPOW [Advanced Power Technology]
Homepage  http://www.advpowertech.com
Logo ADPOW - Advanced Power Technology

APTM120H29F Scheda tecnica(HTML) 2 Page - Advanced Power Technology

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APTM120H29F
APT website – http://www.advancedpower.com
2 – 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
BVDSS
Drain - Source Breakdown Voltage
VGS = 0V, ID = 500µA
1200
V
VGS = 0V,VDS = 1200V
Tj = 25°C
200
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 1000V
Tj = 125°C
1000
µA
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 17A
290
m
Ω
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 5mA
3
5
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±150
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
10.3
Coss
Output Capacitance
1.54
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
0.26
nF
Qg
Total gate Charge
374
Qgs
Gate – Source Charge
48
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 600V
ID = 34A
240
nC
Td(on)
Turn-on Delay Time
20
Tr
Rise Time
15
Td(off)
Turn-off Delay Time
160
Tf
Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 800V
ID = 34A
RG = 2.5Ω
45
ns
Eon
Turn-on Switching Energy
1980
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 800V
ID = 34A, RG = 2.5Ω
1371
µJ
Eon
Turn-on Switching Energy
3131
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 800V
ID = 34A, RG = 2.5Ω
1714
µJ
Source - Drain diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Tc = 25°C
34
IS
Continuous Source current
(Body diode)
Tc = 80°C
25
A
VSD
Diode Forward Voltage
VGS = 0V, IS = - 34A
1.3
V
dv/dt
Peak Diode Recovery
18
V/ns
Tj = 25°C
320
trr
Reverse Recovery Time
IS = - 34A
VR = 600V
diS/dt = 200A/µs
Tj = 125°C
650
ns
Tj = 25°C
4
Qrr
Reverse Recovery Charge
IS = - 34A
VR = 600V
diS/dt = 200A/µs
Tj = 125°C
14
µC
Eon includes diode reverse recovery.
In accordance with JEDEC standard JESD24-1.
dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ≤ - 34A
di/dt
≤ 700A/µs
VR ≤ VDSS
Tj ≤ 150°C



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