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LL4153 Scheda tecnica(PDF) 1 Page - EIC discrete Semiconductors

Il numero della parte LL4153
Spiegazioni elettronici  HIGH SPEED SWITCHING DIODE
PDF  2 Pages
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Produttore elettronici  EIC [EIC discrete Semiconductors]
Homepage  http://www.eicsemi.com
Logo EIC - EIC discrete Semiconductors

LL4153 Scheda tecnica(HTML) 1 Page - EIC discrete Semiconductors

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LL4153
HIGH SPEED SWITCHING DIODE
FEATURES :
• High switching speed: max. 4 ns
• Continuous reverse voltage:max. 50 V
• Repetitive peak reverse voltage:max. 75 V
• Pb / RoHS Free
MECHANICAL DATA :
Case: MiniMELF Glass Case (SOD-80)
Weight: approx. 0.05g
Maximum Ratings and Thermal Characteristics (Rating at 25
°C ambient temperature unless otherwise specified.)
Symbol
Value
Unit
VRM
75
V
VR
50
V
Maximum Continuous Forward Current
IF
mA
Maximum Surge Forward Current at t < 1s , Tj = 25
°C
IFSM
0.5
A
Maximum Power Dissipation
PD
500
mW
Maximum Junction Temperature
TJ
200
°C
Storage Temperature Range
TS
-65 to + 200
°C
Electrical Characteristics (T
J = 25°C unless otherwise noted)
Parameter
Symbol
Min.
Typ.
Max.
Unit
VR = 50 V
-
-
0.05
µA
VR = 50 V , Tj = 150 °C
-
-
50
µA
Forward Voltage
VF
IF = 50 mA
-
-
0.88
V
Diode Capacitance
Cd
-
-
2.0
pF
IF = 10 mA to IR = 10mA
RL = 100Ω ; measured
at IR = 1mA
Page 1 of 2
Rev. 02 : March 25, 2005
Reverse Recovery Time
Trr
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum Continuous Reverse Voltage
Reverse Current
IR
200
ns
4
f = 1MHz ; VR = 0
-
-
Test Condition
0.142(3.6)
0.134(3.4)
φ 0.063 (1.64)
0.055 (1.40)
0.019(0.48)
0.011(0.28)
Cathode Mark
MiniMELF (SOD-80C)
0.098 (2.50)
Max.
Dimensions in inches and ( millimeters )
Mounting Pad Layout
0.049 (1.25)Min.
0.197 (5.00)
REF
0.079 (2.00)Min.


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