MCP6V96UT-ESLASHST datasheet(5/52 Pages) MICROCHIP

5 / 52 page

 2020 Microchip Technology Inc.

DS20006467A-page 5

MCP6V96/6U/7/9

TABLE 1-2:

AC ELECTRICAL CHARACTERISTICS

Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +2.4V to +5.5V, VSS =GND,

VCM =VDD/3, VOUT =VDD/2, VL =VDD/2, RL =10kΩ to VL and CL = 30 pF (refer to Figures 1-4 and 1-5).

Parameters

Sym.

Min.

Typ. Max.

Units

Conditions

Amplifier AC Response

Gain Bandwidth Product

GBWP

—

MHz

Slew Rate

—

9.5

—

V/µs

Phase Margin

—

G = +1

Amplifier Noise Response

Input Noise Voltage

Eni

—0.08

—

µVP-P f= 0.01 Hz to 1Hz

Eni

—0.24

—

µVP-P f = 0.1 Hz to 10 Hz

Input Noise Voltage Density

eni

—11

—

nV/√Hz f < 2 kHz, VDD =5.5V

Input Noise Current Density

ini

—6

—

fA/√Hz

Amplifier Distortion(1)

Intermodulation Distortion (AC)

IMD

—

µVPK VCM tone = 100 mVPK at 1 kHz,

GN =11, RTI

Amplifier Step Response

Start-Up Time

tSTR

—

100

—

µs

G = +1, 0.1% VOUT settling (Note 2)

Offset Correction Settling Time

tSTL

—60

—

µs

G = +1, VIN step of 2V,

VOS within 100 µV of its final value

Output Overdrive Recovery Time

tODR

—

µs

G = -10, ±0.5V input overdrive to VDD/2,

VIN 50% point to VOUT 90% point (Note 3)

EMI Protection

EMI Rejection Ratio

EMIRR

—

VIN =0.1 VPK, f = 400 MHz

—95

—

VIN =0.1 VPK, f = 900 MHz

—93

—

VIN =0.1 VPK, f = 1800 MHz

—90

—

VIN =0.1 VPK, f = 2400 MHz

Note 1:

These parameters were characterized using the circuit in Figure 1-6. In Figures 2-36 and 2-37, there is an IMD

tone at DC, a residual tone at 1 kHz and other IMD tones and clock tones. IMD is Referred to Input (RTI).

High gains behave differently; see Section 4.3.2 “Offset at Power-Up”.

tSTL and tODR include some uncertainty due to clock edge timing.

TABLE 1-3:

TEMPERATURE SPECIFICATIONS

Electrical Characteristics: Unless otherwise indicated, all limits are specified for: VDD = +2.4V to +5.5V, VSS =GND.

Parameters

Sym.

Min.

Typ.

Max.

Units

Conditions

Temperature Ranges

Specified Temperature Range

-40

—

+125

°C

Operating Temperature Range

-40

—

+125

°C

Note 1

Storage Temperature Range

-65

—

+150

°C

Thermal Package Resistances

Thermal Resistance, 5-Lead SC70

JA

—209

—

°C/W

Thermal Resistance, 5-Lead SOT-23

JA

—201

—

°C/W

Thermal Resistance, 8-Lead 2 x 3 TDFN

JA

—53

—

°C/W

Thermal Resistance, 8-Lead MSOP

JA

—211

—

°C/W

Thermal Resistance, 14-Lead TSSOP

JA

—100

—

°C/W

Note 1:

Operation must not cause TJ to exceed Maximum Junction Temperature specification (+150°C).

MCP6V96UT-E/ST Scheda tecnica(PDF) 5 Page - Microchip Technology

MCP6V96UT-E/ST Scheda tecnica(HTML) 5 Page - Microchip Technology

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52

Scheda tecnica Scarica

Link URL