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2SD669A Scheda tecnica(PDF) 2 Page - Weitron Technology

Il numero della parte 2SD669A
Spiegazioni elettronici  NPN Epitaxial Planar Transistors
PDF  5 Pages
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Produttore elettronici  WEITRON [Weitron Technology]
Homepage  http://www.weitron.com.tw
Logo WEITRON - Weitron Technology

2SD669A Scheda tecnica(HTML) 2 Page - Weitron Technology

  2SD669A Datasheet HTML 1Page - Weitron Technology 2SD669A Datasheet HTML 2Page - Weitron Technology 2SD669A Datasheet HTML 3Page - Weitron Technology 2SD669A Datasheet HTML 4Page - Weitron Technology 2SD669A Datasheet HTML 5Page - Weitron Technology  
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Transition frequency
VCE = 5.0V, IC = 150mA
Collector-Emitter Saturation Voltage
IC = 500mA, IB = 50mA
hFE(1)
VCE(sat)
Cob
fT
V
ON CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) (Countinued)
-
-
-
WEITRON
http://www.weitron.com.tw
DC Current Gain
VCE = 5.0V, IC = 150mA
VCE = 5.0V, IC = 500mA
60
60
1.0
320
200
-
-
Base-Emitter ON Voltage
VCE = 5.0V, IC = 150mA
VBE(ON)
V
-
1.5
-
-
-
-
140
Characteristics
Symbol
Min
Typ
Max
Unit
Emitter Cutoff Current
VEB = 4.0V, IC=0
Collector Cutoff Current
VCB = 160V, IE=0
Collector-Base Breakdown Voltage
IC = 10mA, IB = 0
Collector-Emitter Breakdown Voltage
IC = 1.0mA, IE = 0
Emitter-Base Breakdown Voltage
IC = 0, IE = 1.0mA
V(BR)CBO
V(BR)CEO
V(BR)EBO
IEBO
ICBO
10
10
V
V
V
µA
mA
2SD669
2SD669A
2SD669
2SD669A
180
120
160
5.0
-
-
-
-
-
-
-
-
-
-
MHz
-
-
14
pF
2SD669/2SD669A
2/5
18-Oct-05
Collecotr Output Capacitance
VCB = 10V, IE = 0, f = 1MHz
hFE(2)
30
Range
60-120
60-120
CLASSIFICATION OF hFE(1)
100-200
Rank
B
C
D
160-320
100-200
-
2SD669A
2SD669



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