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2SD965 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SD965 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() isc website:www.iscsemi.cn isc & iscsemi is registered trademark 1 isc NPN Silicon Transistor 2SD965 FEATURES · Low collector to emitter saturation voltage Vce(sat) · Satisfactory operation performances at high efficiency with the low-voltage power supply ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A PC Collector Power Dissipation @TC=25℃ 0.75 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
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