Z00607MA2BL2 datasheet(3/8 Pages) STMICROELECTRONICS

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DocID6629 Rev 9

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Z00607

Characteristics

Table 4. Thermal resistances

Symbol

Parameter

Value

Unit

Rth(j-t)

Junction to tab (AC)

SOT-223

°C/W

Rth(j-I)

Junction to lead (AC)

TO-92

Rth(j-a)

Junction to ambient

S(1) = 5 cm²

SOT-223

°C/W

TO-92

150

S = Copper surface under tab.

Figure 1. Maximum power dissipation

versus RMS on-state current

(full cycle)

Figure 2. Relative variation of gate trigger,

holding and latching current versus junction

temperature

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

P(W)

(A)

T(RMS)

-40

-20

100

120

0.0

0.5

1.0

1.5

2.0

2.5

I, I , I [T ] /

GTHL

, I , I [T =25°C]

GTHL

T (°C)

IGT

IH &IL

Typical values

Figure 3. Surge peak on-state current versus

number of cycles

Figure 4. Non-repetitive surge peak

on-state current and corresponding value of I2t

100

1000

One cycle

t=20ms

(A)

TSM

Number of cycles

Non repetitive

T initial = 25°C

Repetitive

= 25°C

amb

0.01

0.10

1.00

10.00

0.1

1.0

10.0

100.0

200.0

t (ms)

(A), I t (A s)

TSM

dI/dt limitation:

20A/µs

T initial = 25°C

ITSM

Sinusoidal pulse with width tp < 10 ms

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