BU808DFX datasheet(2/7 Pages) STMICROELECTRONICS

Il numero della parte	BU808DFX

Spiegazioni elettronici	HIGH VOLTAGE FAST-SWITCHING NPN POWER DARLINGTON TRANSISTOR

PDF	7 Pages

Scroll/Zoom	100%

Produttore elettronici	STMICROELECTRONICS [STMicroelectronics]

Homepage	http://www.st.com

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2 / 7 page

THERMAL DATA

Rthj-case Thermal Resistance Junction-case

Max

2.02

oC/W

ELECTRICAL CHARACTERISTICS

(Tcase = 25 oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICES

Collector Cut-off

Current (VBE = 0)

VCE = 1400 V

400

µA

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 5 V

100

VCE(sat)∗ Collector-Emitter

Saturation Voltage

IC = 5 A

IB = 0.5 A

1.6

VBE(sat)∗ Base-Emitter

Saturation Voltage

IC = 5 A

IB = 0.5 A

2.1

hFE∗

DC Current Gain

IC = 5 A

VCE = 5 V

IC = 5 A

VCE = 5 V Tj = 100 oC

230

INDUCTIVE LOAD

Storage Time

Fall Time

0.2

VCC = 150 V

IC = 5 A

IB1 = 0.5 A

VBE(off) = -5 V

2.3

µs

INDUCTIVE LOAD

Storage Time

Fall Time

VCC = 150 V

IC = 5 A

IB1 = 0.5 A

VBE(off) = -5 V

Tj = 100 oC

0.8

µs

Diode Forward Voltage IF = 5 A

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Safe Operating Area

Thermal Impedance

BU808DF

2/7

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