TCLT100. Series

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Vishay Semiconductors

Rev. 2.9, 01-Dec-15

3

Document Number: 83515

For technical questions, contact: optocoupleranswers@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Note

• According to DIN EN 60747-5-2 (VDE 0884) (see figure 2). This optocoupler is suitable for safe electrical isolation only within the safety

ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits.

Fig. 1 - Derating Diagram

Fig. 2 - Test Pulse Diagram for Sample Test according to

DIN EN 60747-5-2 (VDE 0884); IEC60747-5-5

CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

PART

SYMBOL

MIN.

TYP.

MAX.

UNIT

IC/IF

VCE = 5 V, IF = 5 mA

TCLT1000

CTR

50

-

600

%

VCE = 5 V, IF = 10 mA

TCLT1002

CTR

63

-

125

%

TCLT1003

CTR

100

-

200

%

TCLT1004

CTR

160

-

320

%

VCE = 5 V, IF = 1 mA

TCLT1002

CTR

22

45

-

%

TCLT1003

CTR

34

70

-

%

TCLT1004

CTR

56

100

-

%

VCE = 5 V, IF = 5 mA

TCLT1005

CTR

50

-

150

%

TCLT1006

CTR

100

-

300

%

TCLT1007

CTR

80

-

160

%

TCLT1008

CTR

130

-

260

%

TCLT1009

CTR

200

-

400

%

SAFETY AND INSULATION RATINGS

PARAMETER

CONDITION

SYMBOL

VALUE

UNIT

Partial discharge test voltage - routine test

100 %, ttest = 1 s

Vpd

2kV

Partial discharge test voltage -

lot test (sample test)

tTr = 60 s, ttest = 10 s,

(see figure 2)

VIOTM

8kVpeak

Vpd

1.68

kVpeak

Isolation test voltage (RMS)

VISO

5000

VRMS

Insulation resistance

VIO = 500 V

RIO

1012

Ω

VIO = 500 V, Tamb = 100 °C

RIO

1011

Ω

VIO = 500 V, Tamb = 150 °C

(construction test only)

RIO

109

Ω

Forward current

Isi

130

mA

Power dissipation

Pso

265

mW

Rated impulse voltage

VIOTM

8kV

Safety temperature

Tsi

150

°C

Comparative tracking index

CTI

175

Clearance distance

8.0

mm

Creepage distance

8.0

mm

Insulation distance (internal)

0.40

mm

0

25

50

75

125

0

50

100

150

200

300

Tsi - Safety Temperature (°C)

150

94 9182-2

100

250

IR-diode

Isi (mA)

Phototransistor

P

so (mW)

t

13930

t1, t2 = 1 s to 10 s

t3, t4 = 1 s

ttest = 10 s

tstres = 12 s

VIOTM

Vpd

VIOWM

VIORM

0

t1

ttest

tTr = 60 s

tstres

t3

t4

t2