IXFX21N100Q datasheet(1/4 Pages) IXYS

Il numero della parte	IXFX21N100Q

Spiegazioni elettronici	HiPerFET Power MOSFETs Q-CLASS

PDF	4 Pages

Scroll/Zoom	100%

Produttore elettronici	IXYS [IXYS Corporation]

Homepage	http://www.ixys.com

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1 / 4 page

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Test Conditions

Maximum Ratings

V

DSS

T

J = 25°C to 150°C

1000

V

DGR

T

J = 25°C to 150°C; RGS = 1 MΩ

1000

V

GS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C = 25°C21

A

I

DM

T

C = 25°C, pulse width limited by TJM

84

A

I

AR

T

C = 25°C21

A

E

AR

T

C = 25°C60

mJ

E

AS

T

C = 25°C

2.5

J

dv/dt

I

S

≤ I

DM, di/dt ≤ 100 A/µs, VDD ≤ VDSS

10

V/ns

T

J ≤ 150°C, RG = 2 Ω

P

D

T

C = 25°C

500

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.063 in.) from case for 10 s

300

°C

M

d

Mounting torque

TO-264

0.4/6

Nm/lb.in.

Weight

PLUS 247

6

g

TO-264

10

g

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

min.

typ.

max.

V

DSS

V

GS = 0 V, ID = 1mA

1000

V

GS(th)

V

DS = VGS, ID = 4mA

3

5.5

V

I

GSS

V

GS = ±20 V, VDS = 0

±100

nA

I

DSS

V

DS = VDSS

100

µA

V

GS = 0 V

T

J = 125°C

2

mA

R

DS(on)

V

GS = 10 V, ID = 0.5 • ID25

0.50

Ω

Note 1

DS98677D(10/03)

PLUS 247TM (IXFX)

G

D

(TAB)

G = Gate

D = Drain

S = Source

TAB = Drain

S

G

D

(TAB)

TO-264 AA (IXFK)

HiPerFETTM

Power MOSFETs

Q-CLASS

Single MOSFET Die

N-Channel Enhancement Mode

Avalanche Rated,

Low Qg,

High dV/dt,

Low t

rr

Features

• IXYS advanced low Q

g process

• Low gate charge and capacitances

- easier to drive

- faster switching

• International standard packages

• Low R

DS (on)

• Rated for unclamped Inductive load

switching (UIS) rated

• Molding epoxies meet UL 94 V-0

flammability classification

Applications

• DC-DC converters

• Battery chargers

• Switched-mode and resonant-mode power

supplies

• DC choppers

• AC motor control

• Temperature and lighting controls

Advantages

• PLUS 247TM package for clip or spring

mounting

• Space savings

• High power density

IXFK 21N100Q

V

DSS

= 1000 V

IXFX 21N100Q

I

D25

=

21 A

R

DS(on)=

0.50

Ω

t

rr ≤

≤≤≤≤ 250 ns

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