M58WR032EB datasheet(57/81 Pages) STMICROELECTRONICS

Il numero della parte	M58WR032EB

Spiegazioni elettronici	32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory

PDF	81 Pages

Scroll/Zoom	100%

Produttore elettronici	STMICROELECTRONICS [STMicroelectronics]

Homepage	http://www.st.com

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M58WR032ET, M58WR032EB

Table 32. CFI Query System Interface Information

Offset

Data

Description

Value

1Bh

0017h

VDD Logic Supply Minimum Program/Erase or Write voltage

bit 7 to 4BCD value in volts

bit 3 to 0BCD value in 100 millivolts

1.7V

1Ch

0022h

VDD Logic Supply Maximum Program/Erase or Write voltage

bit 7 to 4BCD value in volts

bit 3 to 0BCD value in 100 millivolts

2.2V

1Dh

0017h

VPP [Programming] Supply Minimum Program/Erase voltage

bit 7 to 4HEX value in volts

bit 3 to 0BCD value in 100 millivolts

1.7V

1Eh

00C0h

VPP [Programming] Supply Maximum Program/Erase voltage

bit 7 to 4HEX value in volts

bit 3 to 0BCD value in 100 millivolts

12V

1Fh

0004h

Typical time-out per single byte/word program = 2n µs

16µs

20h

0003h

Typical time-out for quadruple word program = 2n µs

8µs

21h

000Ah

Typical time-out per individual block erase = 2n ms

22h

0000h

Typical time-out for full chip erase = 2n ms

23h

0003h

Maximum time-out for word program = 2n times typical

128µs

24h

0004h

Maximum time-out for quadruple word = 2n times typical

128µs

25h

0002h

Maximum time-out per individual block erase = 2n times typical

26h

0000h

Maximum time-out for chip erase = 2n times typical

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