Nexperia

BAW56M

High-speed switching diode

6. Ordering information

Table 3. Ordering information

Package

Type number

Name

Description

Version

BAW56M

DFN1006-3

plastic, leadless ultra small package; 3 terminals; 0.35 mm

pitch; 1 mm x 0.6 mm x 0.48 mm body

SOT883

7. Marking

Table 4. Marking codes

Type number

Marking code

BAW56M

S5

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Per diode

VRRM

repetitive peak reverse

voltage

-

90

V

VR

reverse voltage

-

90

V

IF

forward current

Tamb ≤ 25 °C

-

150

mA

tp = 1 µs; square wave; Tj(init) = 25 °C

-

4

A

tp = 1 ms; square wave; Tj(init) = 25 °C

-

1

A

IFSM

non-repetitive peak

forward current

tp = 1 s; square wave; Tj(init) = 25 °C

-

0.5

A

IFRM

repetitive peak forward

current

-

500

mA

Ptot

total power dissipation

Tamb ≤ 25 °C

[1] [2]

-

250

mW

Per device

IF

forward current

Tamb ≤ 25 °C

-

75

mA

Tj

junction temperature

-

150

°C

Tamb

ambient temperature

-65

150

°C

Tstg

storage temperature

-65

150

°C

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.

[2] Reflow soldering is the only recommended soldering method.

BAW56M

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Product data sheet

28 October 2022

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