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STM32G0C1NET6XTR Scheda tecnica(PDF) 94 Page - STMicroelectronics |
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STM32G0C1NET6XTR Scheda tecnica(HTML) 94 Page - STMicroelectronics |
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94 / 159 page ![]() Electrical characteristics STM32G0C1xC/xE 94/159 DS13564 Rev 4 5.3.13 I/O current injection characteristics As a general rule, current injection to the I/O pins, due to external voltage below VSS or above VDDIOx (for standard, 3.3 V-capable I/O pins) should be avoided during normal product operation. However, in order to give an indication of the robustness of the microcontroller in cases when abnormal injection accidentally happens, susceptibility tests are performed on a sample basis during device characterization. Functional susceptibility to I/O current injection While a simple application is executed on the device, the device is stressed by injecting current into the I/O pins programmed in floating input mode. While current is injected into the I/O pin, one at a time, the device is checked for functional failures. The failure is indicated by an out-of-range parameter: ADC error above a certain limit (higher than 5 LSB TUE), induced leakage current on adjacent pins out of conventional limits (-5 µA/+0 µA range) or other functional failure (for example reset occurrence or oscillator frequency deviation). Negative induced leakage current is caused by negative injection and positive induced leakage current is caused by positive injection. Table 54. I/O current injection susceptibility(1) Symbol Description Functional susceptibility Unit Negative injection Positive injection IINJ Injected current on pin All except PA4, PA5, PA6, PB0, PB3, and PC0 -5 N/A mA PA4, PA5 -5 0 mA PA6, PB0, PB3, and PC0 0 N/A mA 1. Based on characterization results, not tested in production. |
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