1

Electrical ratings

TC = 25 °C unless otherwise specified.

Table 1. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage

650

V

Drain-source voltage (transient, tp < 1 μs)

750

VGS

Gate-source voltage

-10 to 7

V

ID (1)

Drain current (continuous) at TC = 25 °C

25

A

Drain current (continuous) at TC = 100 °C

25

IDM

Pulse drain current (tp = 100 μs)

70

A

PTOT

Total power dissipation at TC = 25 °C

305

W

Total power dissipation at TA = 25 °C

5

Tstg

Storage temperature range

-55 to 150

°C

TJ

Operating junction temperature range

°C

1. Limited by package.

Table 2. Thermal data

Symbol

Parameter

Value

Unit

RthJC(1)

Thermal resistance, junction-to-case

0.41

°C/W

RthJA(1)(2)

Thermal resistance, junction-to-ambient

25

°C/W

1. Specified by design, not tested in production.

2. Device mounted on 1.6 mm thick, FR4, 4-layer PCB with 2 oz. copper on each layer. The recommendation for thermal vias

under the thermal pad are 0.3 mm diameter (12 mil) with 0.635 mm pitch (25 mil). The copper layers under the thermal pad

and drain pad are 25 x 25 mm each. The PCB is mounted in horizontal position without air stream cooling.

SGT65R65AL

Electrical ratings

DS13251 - Rev 7

page 2/17