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STGAP2GSN Scheda tecnica(PDF) 5 Page - STMicroelectronics

Il numero della parte STGAP2GSN
Spiegazioni elettronici  Isolated 3 A single gate driver for Enhancement mode GaN FETs
PDF  20 Pages
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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STGAP2GSN Scheda tecnica(HTML) 5 Page - STMicroelectronics

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4
Electrical characteristics
Testing conditions: TJ = 25 °C, VH = 6 V, VDD = 5 V unless otherwise specified.
Typical values are intended at TJ = 25 °C.
Table 5. Electrical characteristics
Symbol
Pin
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Dynamic characteristics
tDon
IN+, IN-
Input to output
propagation delay ON
VDD = 5 V, TJ = 25°C
35
42
50
ns
VDD = 5 V,
-40°C ≤ TJ ≤ +125°C
(1)
30
70
ns
VDD = 3.3 V, TJ =
25°C
45
55
65
ns
VDD = 3.3 V,
-40°C ≤ TJ ≤ +125°C
(1)
39
93
ns
tDoff
IN+, IN-
Input to output
propagation delay OFF
VDD = 5 V, TJ = 25°C
35
42
50
ns
VDD = 5 V,
-40°C ≤ TJ ≤ +125°C
(1)
30
70
ns
VDD = 3.3 V, TJ =
25°C
45
55
65
ns
VDD = 3.3 V,
-40°C ≤ TJ ≤ +125°C
(1)
39
93
ns
tr
Rise time
CL= 4.7 nF
see Figure 8
30
ns
tf
Fall time
30
ns
PWD
Pulse Width Distortion
|tDon - tDoff|
8
ns
CMTI (1)
Common-mode transient
immunity, |dVISO/dt|
VCM = 1500 V,
see Figure 9
100
V/ns
Supply voltage
VHon
VH
VH UVLO turn-on
threshold
4.2
4.5
4.8
V
VHoff
VH
VH UVLO turn-off
threshold
4.1
4.4
4.7
V
VHhyst
VH
VH UVLO hysteresis
90
100
130
mV
IQH
VH
VH quiescent supply
current
1.3
1.8
mA
IQHSBY
VH
Standby VH quiescent
supply current
Standby mode
400
550
µA
SafeClp
GOFF
GOFF active clamp
IGOFF = 0.2 A;
VH floating
2
2.3
V
IQDD
VDD
VDD quiescent supply
current
1.0
1.3
mA
STGAP2GSN
Electrical
characteristics
DS14151 - Rev 1
page 5/20



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