STGAP2GSNC datasheet(6/20 Pages) STMICROELECTRONICS

6 / 20 page

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IQDDSBY

VDD

Standby VDD quiescent

supply current

Standby mode

µA

Logic inputs

Vil

IN+, IN-

Low-level logic threshold

voltage

0.29·VDD 0.33·VDD 0.37·VDD

Vih

IN+, IN-

High-level logic threshold

voltage

0.58·VDD 0.66·VDD 0.70·VDD

IINh

IN+, IN-

INx logic “1” input bias

current

INx = 5 V

µA

IINl

IN+, IN-

INx logic “0” input bias

current

INx = GND

µA

Rpd

IN+, IN-

Inputs pull-down resistors INx = 5 V

100

150

kΩ

Driver buffer section

IGON

GON

Source short-circuit

current

TJ = 25 °C

TJ = -40 ÷ +125 °C (1)

1.5

2.5

VGONH

GON

Source output high-level

voltage

IGON = 100 mA

VH-0.15

VH-0.12

RGON

GON

Source RDS_ON

IGON = 100 mA

1.25

1.5

IGOFF

GOFF

Sink short-circuit current

TJ = 25 °C

TJ = -40 ÷ +125 °C (1)

2.25

3.75

VGOFFL

GOFF

Sink output low-level

voltage

IGOFF = 100 mA

RGOFF

GOFF

Sink RDS_ON

IGOFF = 100 mA

0.6

0.8

Overtemperature protection

TSD

Shutdown temperature (1)

170

°C

Thys

Temperature hysteresis (1)

°C

Standby

tSTBY

Standby time

See Section 6.6

200

280

500

µs

tWUP

Wake-up time

See Section 6.6

µs

tawake

Wake-up delay

See Section 6.6

µs

tstbyfilt

Standby filter

See Section 6.6

200

280

800

1. Characterization data, not tested in production

STGAP2GSN

Electrical

characteristics

DS14151 - Rev 1

page 6/20

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