Flat-8

1

4

5

8

Pin 4 and pin 5

are connected together to the seal ring and lid

Flat-8

1

2

3

8

7

6

4

5

C1

B1

E1

C2

B2

E2

Features

Vceo

IC(max.)

HFE at 10 V,

150 mA

Tj(max.)

60 V

0.8 A

> 100

200 °C

•

Hermetic package

•

Qualified as per MIL-PRF-M19500/773

•

100 krad

Description

The JANS2ST3360K is dual complementary (NPN and PNP) bipolar transistor in a

single Flat-8 hermetic package. Qualified as per MIL-PRF-M19500/773 it is available

in JANS and JANSR screening options.

Able to operate under critical environment and radiation exposure, it provides high

reliability performance and immunity to the total ionizing dose (TID) at high and low

dose rate conditions.

Specifically recommended for space and harsh environment applications it is suitable

for low current and high precision circuits such preamplifiers, oscillators, current

mirror configuration and high peak current required in power MOSFET driver circuits.

In case of discrepancies between this datasheet and the relevant agency

specification, the latter takes precedence.

Product summary

Product summary

Part-number

Screening

options

Agency

specification

Package

Radiation

level

J2ST3360K1

Engineering model

-

Flat-8

-

JANS2ST3360Kx

JANS

MIL-PRF-M19500/773

-

JANSR2ST3360Kx

JANSR

100 krad

Note:

See Table 8 for ordering information.

Rad-Hard 60 V, 0.8 A NPN and PNP complementary transistors

JANS2ST3360K

Datasheet

DS11305 - Rev 3 - February 2022

For further information contact your local STMicroelectronics sales office.

www.st.com