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JANS2ST3360KX Scheda tecnica(PDF) 6 Page - STMicroelectronics |
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JANS2ST3360KX Scheda tecnica(HTML) 6 Page - STMicroelectronics |
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6 / 12 page ![]() 3 Radiation hardness assurance JANSR2ST3360K is guaranteed at 100 krad in compliance with the MIL-PRF-19500 Group D between 50 and 300 rad/s and 0.1 rad/s as per ESCC 22900. Post radiation electrical characteristics are described in Table 5 and Table 6. Table 5. MIL-PRF-19500 post radiation electrical characteristics for NPN (Tamb = 25 °C unless otherwise specified) Symbol Parameter Test conditions Min. Max Unit ICBO Collector cut-off current (IE=0) VCB= 60 V 200 nA IEBO Emitter cut-off current (IC= 0) VEB = 6 V 200 nA VBE(on) VBE(on) Base-emitter on voltage VCE = 2 V, IC = 100 mA 600 828 mV V(BR)CBO Collector-base breakdown voltage (IE= 0) IC=100 μA 60 V V(BR)CEO Collector-emitter breakdown voltage (IB = 0) IC = 1 mA 60 V V(BR)EBO Emitter-base breakdown voltage (IC= 0) IE = 10 μA 6 V VCE(sat)(1) Collector-emitter saturation voltage IC=0.8 A, IB = 40 mA 184 mV IC= 2 A, IB = 100 mA 437 hFE(1) DC current gain IC= 100 mA, VCE= 2 V [50](2) IC= 1 A, VCE= 2 V [80](2) 400 1. Pulsed duration = 300 μs, duty cycle ≥ 2 % 2. See method 1019 of MIL-STD-750 about how to determine [hFE] by first calculating the delta (1/hFE) from the pre- and post-radiation hFE. Note that the [hFE] is not the same as hFE and cannot be measured directly. The [hFE] value can never exceed the pre-radiation minimum hFE, which is based upon. Table 6. MIL-PRF-19500 post radiation electrical characteristics for PNP (Tamb = 25 °C unless otherwise specified) Symbol Parameter Test conditions Min. Max Unit ICBO Collector cut-off current (IE=0) VCB= 60 V 200 nA IEBO Emitter cut-off current (IC= 0) VEB = 6 V 200 nA VBE(on) Base-emitter on voltage VCE = 2 V, IC = 100 mA 600 828 mV V(BR)CBO Collector-base breakdown voltage (IE= 0) IC= 100 μA 60 V V(BR)CEO Collector-emitter breakdown voltage (IB = 0) IC = 1 mA 60 V V(BR)EBO Emitter-base breakdown voltage (IC= 0) IE = 10 μA 6 V VCE(sat)(1) Collector-emitter saturation voltage IC=0.8 A, IB = 40 mA 207 mV IC= 2 A, IB = 100 mA 506 hFE(2) DC current gain IC= 100 mA, VCE= 2 V [50](3) IC= 1 A, VCE= 2 V [80](3) 400 1. Pulsed duration = 300 μs, duty cycle ≥ 2 % 2. For PNP type, voltage and current values are negative. 3. See method 1019 of MIL-STD-750 about how to determine [hFE] by first calculating the delta (1/hFE) from the pre- and post-radiation hFE. Note that the [hFE] is not the same as hFE and cannot be measured directly. The [hFE] value can never exceed the pre-radiation minimum hFE, which is based upon. JANS2ST3360K Radiation assurance DS11305 - Rev 3 page 6/12 |
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